E-MRS 2011 SPRING MEETING
Prof. Dr. Anjana Devi hatte auf dem E-MRS 2011 Spring Meeting, welches vom 9.-13. Mai 2011 in Nizza, Frankreich stattfand, einen eingeladenen Vortrag über "Rare-earth doped HfO2 films grown by MOCVD and ALD". Hierdurch wurden sowohl das Materials Research Department (MRD) als auch das Research Department "Plasmas with Complex Interactions" repräsentiert.
Resume: Doping of rare-earth metal oxide in HfO2 has gained considerable interest especially for higher permittivity (k) dielectrics in logic and memory devices. The doping is intended to increase the crystallization temperature, stabilize the cubic phase of HfO2 and reduce the leakage currents. Another promising area is that the Gd doping of HfO2 could lead to a dilute magnetic semiconductor. Atomic layer deposition (ALD) and metalorganic chemical vapor deposition (MOCVD) are preferred techniques for growing high quality layers especially for the above mentioned applications. In this presentation, we have demonstrated the growth of rare-earth doped HfO2 films by ALD and MOCVD using the guanidinate class of precursors which possess the prerequisites for ideal ALD and MOCVD processes. The crystalline structure, microstructure and composition of the films were investigated by means of several techniques that include XRD, SEM, AFM, RBS, XPS and AES. The XRD analysis reveals that Gd doping stabilises the higher-k tetragonal phase. Optical measurements were carried out using ellipsometry and Raman spectroscopy and finally the electrical measurements were performed.